FZT692BTA
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- Mfr.Part #
- FZT692BTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 70V 2A SOT223-3
- Stock
- 36,785
- In Stock ：
- 36,785
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.65mm
- Factory Lead Time :
- 13 Weeks
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Weight :
- 7.994566mg
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 150MHz
- Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Length :
- 6.7mm
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 70V
- Element Configuration :
- Single
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- hFE Min :
- 400
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage :
- 70V
- Collector Base Voltage (VCBO) :
- 70V
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 500mV
- Radiation Hardening :
- No
- Continuous Collector Current :
- 2A
- Additional Feature :
- High Reliability
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 70V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 70V
- ECCN Code :
- EAR99
- Package / Case :
- TO-261-4, TO-261AA
- Max Power Dissipation :
- 2W
- Current Rating :
- 1A
- JESD-30 Code :
- R-PDSO-G4
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 150MHz
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Published :
- 2006
- Base Part Number :
- FZT692
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- Termination :
- SMD/SMT
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA
- Width :
- 3.7mm
- Datasheets
- FZT692BTA
NPN -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT692BTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 1A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 2A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 150MHz.This device can take an input voltage of 70V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
FZT692BTA Features
the DC current gain for this device is 150 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
FZT692BTA Applications
There are a lot of Diodes Incorporated
FZT692BTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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