FQU4P25TU
- Mfr.Part #
- FQU4P25TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 250V 3.1A IPAK
- Stock
- 4,594
- In Stock :
- 4,594
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drain Current-Max (Abs) (ID) :
- 3.1A
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- JESD-30 Code :
- R-PSIP-T3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Avalanche Energy Rating (Eas) :
- 280 mJ
- Reach Compliance Code :
- Unknown
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 2.1 Ω @ 1.55A, 10V
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Tc
- DS Breakdown Voltage-Min :
- 250V
- Terminal Finish :
- MATTE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Series :
- QFET®
- Number of Terminations :
- 3
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Pulsed Drain Current-Max (IDM) :
- 12.4A
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 420pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FQU4P25TU

P-Channel Tube 2.1 Ω @ 1.55A, 10V ±30V 420pF @ 25V 14nC @ 10V 250V TO-251-3 Short Leads, IPak, TO-251AA
FQU4P25TU Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 280 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 420pF @ 25V.3.1A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 12.4A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
FQU4P25TU Features
the avalanche energy rating (Eas) is 280 mJ
based on its rated peak drain current 12.4A.
a 250V drain to source voltage (Vdss)
FQU4P25TU Applications
There are a lot of Rochester Electronics, LLC
FQU4P25TU applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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