FQU4N50TU

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Mfr.Part #
FQU4N50TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 500V 2.6A IPAK
Stock
2,918
In Stock :
2,918

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Fall Time (Typ) :
30 ns
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
2.7 Ω @ 1.3A, 10V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Mount :
Through Hole
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Turn On Delay Time :
12 ns
Drain to Source Breakdown Voltage :
500V
Gate to Source Voltage (Vgs) :
30V
Weight :
343.08mg
Element Configuration :
Single
Rise Time :
45ns
Power Dissipation :
2.5W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
8 Weeks
Packaging :
Tube
Power Dissipation-Max :
2.5W Ta 45W Tc
Turn-Off Delay Time :
20 ns
Continuous Drain Current (ID) :
2.6A
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
2.6A Tc
Radiation Hardening :
No
FET Type :
N-Channel
Mounting Type :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Series :
QFET®
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQU4N50TU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Mounting Type:Through Hole, FQU4N50TU pinout, FQU4N50TU datasheet PDF, FQU4N50TU amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQU4N50TU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQU4N50TU


N-Channel Tube 2.7 Ω @ 1.3A, 10V ±30V 460pF @ 25V 13nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

FQU4N50TU-WS Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 460pF @ 25V.This device conducts a continuous drain current (ID) of 2.6A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQU4N50TU-WS Features


a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 20 ns


FQU4N50TU-WS Applications


There are a lot of ON Semiconductor
FQU4N50TU-WS applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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