FQU4N50TU
- Mfr.Part #
- FQU4N50TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 2.6A IPAK
- Stock
- 2,918
- In Stock :
- 2,918
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 12 ns
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2.5W
- Power Dissipation-Max :
- 2.5W Ta 45W Tc
- Turn-Off Delay Time :
- 20 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Rise Time :
- 45ns
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Tc
- Factory Lead Time :
- 8 Weeks
- Fall Time (Typ) :
- 30 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Series :
- QFET®
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.3A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 2.6A
- Drain to Source Breakdown Voltage :
- 500V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 343.08mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 25V
- Datasheets
- FQU4N50TU

N-Channel Tube 2.7 Ω @ 1.3A, 10V ±30V 460pF @ 25V 13nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
FQU4N50TU-WS Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 460pF @ 25V.This device conducts a continuous drain current (ID) of 2.6A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQU4N50TU-WS Features
a continuous drain current (ID) of 2.6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 20 ns
FQU4N50TU-WS Applications
There are a lot of ON Semiconductor
FQU4N50TU-WS applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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