FQU4N25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.75 Ω @ 1.5A, 10V

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.5W Ta 37W Tc

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

52 mJ

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

250V

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Drain Current-Max (Abs) (ID) :

3A

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Surface Mount :

No

Terminal Finish :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

250V

Series :

QFET®

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Pulsed Drain Current-Max (IDM) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V