FQU4P25TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

250V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

12.4A

Terminal Position :

Single

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Packaging :

Tube

FET Type :

P-Channel

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 1.55A, 10V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Series :

QFET®

DS Breakdown Voltage-Min :

250V

Power Dissipation-Max :

2.5W Ta 45W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

Not Applicable

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

3.1A

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Elements :

1

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Avalanche Energy Rating (Eas) :

280 mJ