FQU4N50TU-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

500V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Number of Pins :

3

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Turn-Off Delay Time :

20 ns

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc

Rds On (Max) @ Id, Vgs :

2.7 Ω @ 1.3A, 10V

Rise Time :

45ns

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

2.6A

FET Type :

N-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Weight :

343.08mg

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta 45W Tc

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Fall Time (Typ) :

30 ns

Packaging :

Tube

Mount :

Through Hole

Series :

QFET®