FQU4N25TU

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Mfr.Part #
FQU4N25TU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 250V 3A IPAK
Stock
3,247
In Stock :
3,247

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
250V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
JESD-30 Code :
R-PSIP-T3
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
200pF @ 25V
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±30V
Operating Temperature :
-55°C~150°C TJ
Qualification Status :
COMMERCIAL
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Drain Current-Max (Abs) (ID) :
3A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Reach Compliance Code :
Unknown
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Application :
SWITCHING
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
250V
Mounting Type :
Through Hole
Pin Count :
3
Number of Elements :
1
Terminal Finish :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
12A
Pbfree Code :
yes
Series :
QFET®
Avalanche Energy Rating (Eas) :
52 mJ
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
1.75 Ω @ 1.5A, 10V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 10V
Power Dissipation-Max :
2.5W Ta 37W Tc
Terminal Position :
Single
Datasheets
FQU4N25TU
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQU4N25TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, FQU4N25TU pinout, FQU4N25TU datasheet PDF, FQU4N25TU amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQU4N25TU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQU4N25TU


N-Channel Tube 1.75 Ω @ 1.5A, 10V ±30V 200pF @ 25V 5.6nC @ 10V 250V TO-251-3 Short Leads, IPak, TO-251AA

FQU4N25TU Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 52 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 25V.3A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 12A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.

FQU4N25TU Features


the avalanche energy rating (Eas) is 52 mJ
based on its rated peak drain current 12A.
a 250V drain to source voltage (Vdss)


FQU4N25TU Applications


There are a lot of Rochester Electronics, LLC
FQU4N25TU applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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