FQU4N25TU
- Mfr.Part #
- FQU4N25TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 3A IPAK
- Stock
- 3,247
- In Stock :
- 3,247
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 250V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Drain Current-Max (Abs) (ID) :
- 3A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 250V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Number of Elements :
- 1
- Terminal Finish :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 12A
- Pbfree Code :
- yes
- Series :
- QFET®
- Avalanche Energy Rating (Eas) :
- 52 mJ
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 1.75 Ω @ 1.5A, 10V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 10V
- Power Dissipation-Max :
- 2.5W Ta 37W Tc
- Terminal Position :
- Single
- Datasheets
- FQU4N25TU

N-Channel Tube 1.75 Ω @ 1.5A, 10V ±30V 200pF @ 25V 5.6nC @ 10V 250V TO-251-3 Short Leads, IPak, TO-251AA
FQU4N25TU Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 52 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 25V.3A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 12A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 250V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
FQU4N25TU Features
the avalanche energy rating (Eas) is 52 mJ
based on its rated peak drain current 12A.
a 250V drain to source voltage (Vdss)
FQU4N25TU Applications
There are a lot of Rochester Electronics, LLC
FQU4N25TU applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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