FQU3P20TU
- Mfr.Part #
- FQU3P20TU
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 2.4A IPAK
- Stock
- 32,429
- In Stock :
- 32,429
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- QFET®
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- P-Channel
- DS Breakdown Voltage-Min :
- 200V
- Surface Mount :
- No
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Drain Current-Max (Abs) (ID) :
- 2.4A
- Power Dissipation-Max :
- 2.5W Ta 37W Tc
- Drain to Source Voltage (Vdss) :
- 200V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 9.6A
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSIP-T3
- Terminal Finish :
- MATTE TIN
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs (Max) :
- ±30V
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.2A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Number of Terminations :
- 3
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FQU3P20TU

P-Channel Tube 2.7 Ω @ 1.2A, 10V ±30V 250pF @ 25V 8nC @ 10V 200V TO-251-3 Short Leads, IPak, TO-251AA
FQU3P20TU Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2.4A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9.6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQU3P20TU Features
the avalanche energy rating (Eas) is 150 mJ
based on its rated peak drain current 9.6A.
a 200V drain to source voltage (Vdss)
FQU3P20TU Applications
There are a lot of Rochester Electronics, LLC
FQU3P20TU applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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