FQU3P20TU

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Mfr.Part #
FQU3P20TU
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET P-CH 200V 2.4A IPAK
Stock
32,429
In Stock :
32,429

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
Transistor Element Material :
SILICON
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Series :
QFET®
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
5V @ 250μA
FET Type :
P-Channel
DS Breakdown Voltage-Min :
200V
Surface Mount :
No
Avalanche Energy Rating (Eas) :
150 mJ
Drain Current-Max (Abs) (ID) :
2.4A
Power Dissipation-Max :
2.5W Ta 37W Tc
Drain to Source Voltage (Vdss) :
200V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
9.6A
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
Not Applicable
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Position :
Single
JESD-30 Code :
R-PSIP-T3
Terminal Finish :
MATTE TIN
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
2.4A Tc
Pin Count :
3
Rds On (Max) @ Id, Vgs :
2.7 Ω @ 1.2A, 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Number of Terminations :
3
Qualification Status :
COMMERCIAL
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FQU3P20TU
Introducing Transistors - FETs, MOSFETs - Single onsemi FQU3P20TU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Terminations:3, FQU3P20TU pinout, FQU3P20TU datasheet PDF, FQU3P20TU amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQU3P20TU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQU3P20TU


P-Channel Tube 2.7 Ω @ 1.2A, 10V ±30V 250pF @ 25V 8nC @ 10V 200V TO-251-3 Short Leads, IPak, TO-251AA

FQU3P20TU Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2.4A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9.6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQU3P20TU Features


the avalanche energy rating (Eas) is 150 mJ
based on its rated peak drain current 9.6A.
a 200V drain to source voltage (Vdss)


FQU3P20TU Applications


There are a lot of Rochester Electronics, LLC
FQU3P20TU applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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