FQU3P20TU
- Mfr.Part #
- FQU3P20TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 2.4A IPAK
- Stock
- 13,384
- In Stock :
- 13,384
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- MATTE TIN
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.2A, 10V
- Surface Mount :
- No
- Pulsed Drain Current-Max (IDM) :
- 9.6A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Series :
- QFET®
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JESD-30 Code :
- R-PSIP-T3
- Power Dissipation-Max :
- 2.5W Ta 37W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- COMMERCIAL
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Peak Reflow Temperature (Cel) :
- Not Applicable
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 200V
- Drain Current-Max (Abs) (ID) :
- 2.4A
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Datasheets
- FQU3P20TU

P-Channel Tube 2.7 Ω @ 1.2A, 10V ±30V 250pF @ 25V 8nC @ 10V 200V TO-251-3 Short Leads, IPak, TO-251AA
FQU3P20TU Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2.4A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9.6A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQU3P20TU Features
the avalanche energy rating (Eas) is 150 mJ
based on its rated peak drain current 9.6A.
a 200V drain to source voltage (Vdss)
FQU3P20TU Applications
There are a lot of Rochester Electronics, LLC
FQU3P20TU applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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