FQU3N50CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Continuous Drain Current (ID) :

2.5A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Drain to Source Breakdown Voltage :

500V

Lead Free :

Lead Free

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

365pF @ 25V

Turn-Off Delay Time :

35 ns

Avalanche Energy Rating (Eas) :

200 mJ

Power Dissipation-Max :

35W Tc

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.25A, 10V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Through Hole

Fall Time (Typ) :

25 ns

Factory Lead Time :

5 Weeks

Number of Pins :

3

Mounting Type :

Through Hole

JESD-609 Code :

e3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

35W

Element Configuration :

Single

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Turn On Delay Time :

10 ns

Rise Time :

25ns

Weight :

343.08mg

FET Type :

N-Channel

Published :

2013

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING