FQU3N40TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Pbfree Code :

yes

DS Breakdown Voltage-Min :

400V

Avalanche Energy Rating (Eas) :

120 mJ

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

400V

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

8A

Mounting Type :

Through Hole

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Power Dissipation-Max :

2.5W Ta 30W Tc

Drain Current-Max (Abs) (ID) :

2A

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Qualification Status :

COMMERCIAL

Number of Terminations :

3

Pin Count :

3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1A, 10V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Vgs(th) (Max) @ Id :

5V @ 250μA