FQU3N60TU

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Packaging :

Tube

DS Breakdown Voltage-Min :

600V

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Pbfree Code :

yes

Transistor Element Material :

SILICON

Terminal Position :

Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

200 mJ

Number of Elements :

1

Vgs (Max) :

±30V

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

9.6A

Number of Terminations :

3

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.2A, 10V

Drain Current-Max (Abs) (ID) :

2.4A

Power Dissipation-Max :

2.5W Ta 50W Tc