FQU3N60TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

200 mJ

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Number of Terminations :

3

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain Current-Max (Abs) (ID) :

2.4A

Series :

QFET®

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Surface Mount :

No

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

9.6A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta 50W Tc

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1.2A, 10V