FQT1N60CTF
- Mfr.Part #
- FQT1N60CTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 0.2A SOT-223-4
- Stock
- 4,907
- In Stock :
- 4,907
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Feedback Cap-Max (Crss) :
- 6 pF
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Series :
- QFET®
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 17 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 4
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 0.2A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 11.5 Ω @ 100mA, 10V
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Terminal Finish :
- Tin (Sn)
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 2.1W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 10V
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 170pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PDSO-G4
- Datasheets
- FQT1N60CTF

N-Channel Tape & Reel (TR) 11.5 Ω @ 100mA, 10V ±30V 170pF @ 25V 6.2nC @ 10V 600V TO-261-4, TO-261AA
FQT1N60CTF-WS Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 170pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.2A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQT1N60CTF-WS Features
a 600V drain to source voltage (Vdss)
FQT1N60CTF-WS Applications
There are a lot of ON Semiconductor
FQT1N60CTF-WS applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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