FQT1N60CTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-30 Code :

R-PDSO-G4

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 100mA, 10V

FET Type :

N-Channel

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

2.1W Tc

Case Connection :

DRAIN

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Number of Terminations :

4

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Pbfree Code :

yes

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Feedback Cap-Max (Crss) :

6 pF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Factory Lead Time :

17 Weeks

Drain Current-Max (Abs) (ID) :

0.2A

Qualification Status :

Not Qualified

Package / Case :

TO-261-4, TO-261AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual