FQT13N06LTF
- Mfr.Part #
- FQT13N06LTF
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2.8A SOT223-4
- Stock
- 15,631
- In Stock :
- 15,631
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.1W
- Vgs (Max) :
- ±20V
- Contact Plating :
- Tin
- Number of Pins :
- 3
- JESD-30 Code :
- R-PDSO-G4
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Factory Lead Time :
- 21 Weeks
- Width :
- 3.56mm
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Rise Time :
- 90ns
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Voltage - Rated DC :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2001
- Element Configuration :
- Single
- Series :
- QFET®
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Turn On Delay Time :
- 8 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Mounting Type :
- Surface Mount
- Resistance :
- 110mOhm
- Drain to Source Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 2.8A
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 2.5V
- Turn-Off Delay Time :
- 20 ns
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 2.8A
- Power Dissipation-Max :
- 2.1W Tc
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 1.6mm
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 1.4A, 10V
- Weight :
- 188mg
- Length :
- 6.5mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Fall Time (Typ) :
- 40 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 6.4nC @ 5V
- Datasheets
- FQT13N06LTF

N-Channel Tape & Reel (TR) 110m Ω @ 1.4A, 10V ±20V 350pF @ 25V 6.4nC @ 5V TO-261-4, TO-261AA
FQT13N06LTF Description
FQT13N06LTF belongs to the family of N-channel enhancement-mode QFET? MOSFETs designed based on the proprietary planar stripe and DMOS technology to achieve low on-state resistance, superior switching performance, and high avalanche energy strength. Based on these characteristics, FQT13N06LTF is well suited for switching mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQT13N06LTF Features
-
Low gate charge
-
Low on-state resistance
-
Superior switching performance
-
High avalanche energy strength
-
Available in the SOT-223 package
FQT13N06LTF Applications
-
Switching mode power supplies
-
Audio amplifier
-
DC motor control
-
Variable switching power applications
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|---|---|---|---|
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