FQT1N80TF-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

2.1W Tc

Lead Free :

Lead Free

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Fall Time (Typ) :

25 ns

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Rise Time :

25ns

Threshold Voltage :

5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

800V

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

0.0002A

Number of Pins :

3

Power Dissipation :

2.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Package / Case :

TO-261-3

Weight :

188mg

Number of Terminations :

4

Mount :

Surface Mount

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

200mA

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 25V

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

5 pF

Reach Compliance Code :

not_compliant

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

15 ns

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

20 Ω @ 100mA, 10V

JESD-30 Code :

R-PDSO-G4

Turn On Delay Time :

10 ns

RoHS Status :

ROHS3 Compliant