FQT1N80TF-WS
- Mfr.Part #
- FQT1N80TF-WS
- Manufacturer
- onsemi
- Package / Case
- TO-261-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 200MA SOT223-3
- Stock
- 4,953
- In Stock :
- 4,953
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 195pF @ 25V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tc
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 0.0002A
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 20 Ω @ 100mA, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 10 Weeks
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-261-3
- Power Dissipation :
- 2.1W
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Series :
- QFET®
- Turn On Delay Time :
- 10 ns
- Weight :
- 188mg
- Fall Time (Typ) :
- 25 ns
- JESD-30 Code :
- R-PDSO-G4
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 15 ns
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 7.2nC @ 10V
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 800V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Feedback Cap-Max (Crss) :
- 5 pF
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Rise Time :
- 25ns
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.1W Tc
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 5V
- Number of Terminations :
- 4
- Datasheets
- FQT1N80TF-WS
FQT1N80TF-WS Documents

N-Channel Tape & Reel (TR) 20 Ω @ 100mA, 10V ±30V 195pF @ 25V 7.2nC @ 10V TO-261-3
FQT1N80TF-WS Overview
A device's maximum input capacitance is 195pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 0.0002A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.This device uses no drive voltage (10V) to reduce its overall power consumption.
FQT1N80TF-WS Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 15 ns
a threshold voltage of 5V
FQT1N80TF-WS Applications
There are a lot of ON Semiconductor
FQT1N80TF-WS applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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