FQT1N80TF-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Fall Time (Typ) :

25 ns

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

188mg

Terminal Position :

Dual

Power Dissipation-Max :

2.1W Tc

Feedback Cap-Max (Crss) :

5 pF

Drain to Source Breakdown Voltage :

800V

Case Connection :

DRAIN

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Rise Time :

25ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.0002A

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

20 Ω @ 100mA, 10V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 25V

Reach Compliance Code :

not_compliant

Power Dissipation :

2.1W

Turn-Off Delay Time :

15 ns

Mounting Type :

Surface Mount

Turn On Delay Time :

10 ns

Package / Case :

TO-261-3

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

Threshold Voltage :

5V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Series :

QFET®

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Element Configuration :

Single

JESD-30 Code :

R-PDSO-G4

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Continuous Drain Current (ID) :

200mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED