FQT13N06TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Turn-Off Delay Time :

8 ns

Width :

3.56mm

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Power Dissipation-Max :

2.1W Tc

Pbfree Code :

yes

Case Connection :

DRAIN

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Weight :

188mg

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

60V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Turn On Delay Time :

5 ns

Current Rating :

2.8A

REACH SVHC :

No SVHC

Height :

1.6mm

Vgs (Max) :

±25V

Transistor Element Material :

SILICON

Element Configuration :

Single

Resistance :

140mOhm

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

FET Type :

N-Channel

Feedback Cap-Max (Crss) :

20 pF

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Drain to Source Breakdown Voltage :

60V

Terminal Position :

Dual

Terminal Finish :

Tin

Rise Time :

25ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

140m Ω @ 1.4A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2002

JESD-30 Code :

R-PDSO-G4

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15 ns

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2.8A

Terminal Form :

Gull wing

Package / Case :

TO-261-4, TO-261AA

Length :

6.5mm

Gate to Source Voltage (Vgs) :

25V

JESD-609 Code :

e3

Power Dissipation :

2.1W

Series :

QFET®