FQT1N60CTF-WS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Power Dissipation-Max :

2.1W Tc

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Factory Lead Time :

17 Weeks

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 100mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G4

Feedback Cap-Max (Crss) :

6 pF

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Case Connection :

DRAIN

Number of Terminations :

4

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

0.2A

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 10V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Package / Case :

TO-261-4, TO-261AA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED