FQA7N80C-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

580 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

DS Breakdown Voltage-Min :

800V

Drain Current-Max (Abs) (ID) :

7A

Number of Elements :

1

Drain-source On Resistance-Max :

1.9Ohm

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Power Dissipation-Max (Abs) :

198W

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature (Max) :

150°C

Factory Lead Time :

9 Weeks

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

28A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED