FQA7N80C-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

580 mJ

Qualification Status :

Not Qualified

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

1.9Ohm

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

28A

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Factory Lead Time :

9 Weeks

Packaging :

Tube

Operating Temperature (Max) :

150°C

Drain Current-Max (Abs) (ID) :

7A

Power Dissipation-Max (Abs) :

198W

Surface Mount :

No

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)