FQA7N80C-F109

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

580 mJ

Pulsed Drain Current-Max (IDM) :

28A

Drain-source On Resistance-Max :

1.9Ohm

Terminal Form :

THROUGH-HOLE

Drain Current-Max (Abs) (ID) :

7A

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Surface Mount :

No

Factory Lead Time :

9 Weeks

Transistor Application :

SWITCHING

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Number of Elements :

1

DS Breakdown Voltage-Min :

800V

JESD-30 Code :

R-PSFM-T3

Operating Temperature (Max) :

150°C

Power Dissipation-Max (Abs) :

198W