FQA70N15
- Mfr.Part #
- FQA70N15
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 7,216
- In Stock :
- 7,216
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 35A, 10V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 25V
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 290 ns
- Radiation Hardening :
- No
- Rise Time :
- 420ns
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 175nC @ 10V
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 18.9mm
- Weight :
- 6.401g
- Drain to Source Breakdown Voltage :
- 150V
- Number of Elements :
- 1
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 70A
- Pulsed Drain Current-Max (IDM) :
- 280A
- Turn-Off Delay Time :
- 340 ns
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 60 ns
- Published :
- 2000
- ECCN Code :
- EAR99
- Power Dissipation :
- 330W
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- Number of Pins :
- 3
- Length :
- 15.8mm
- Vgs (Max) :
- ±25V
- Voltage - Rated DC :
- 150V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-3P-3, SC-65-3
- Threshold Voltage :
- 4V
- Power Dissipation-Max :
- 330W Tc
- Current Rating :
- 70A
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.028Ohm
- Datasheets
- FQA70N15
FQA70N15 Documents

N-Channel Tube 28m Ω @ 35A, 10V ±25V 5400pF @ 25V 175nC @ 10V TO-3P-3, SC-65-3
FQA70N15 Description
This N-channel enhanced mode power MOSFET FQA70N15 is a proprietary planar stripe and DMOS technology produced by Xiantong Semiconductor. This advanced MosFeT technology is tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
FQA70N15 Features
·70A100VRpsion)=28mΩ(Max)@VGs=10V=35A
·Low Gate Charge(Typ.135nC)
·LowCrss(Typ.135pF)
·100% Avalanche Tested
·175℃ Maximum Junction Temperature Rating
FQA70N15 Applications
Switched Mode Power Supplies
Audio Amplifiers
DC Motor control
Variable Switching Power Applications
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