FQA70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

470ns

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Nominal Vgs :

4 V

Voltage - Rated DC :

100V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Turn-Off Delay Time :

130 ns

Number of Pins :

3

Height :

18.9mm

Mount :

Through Hole

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

70A

JESD-609 Code :

e3

Package / Case :

TO-3P-3, SC-65-3

Length :

15.8mm

Turn On Delay Time :

30 ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Current Rating :

70A

Weight :

6.401g

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

23mOhm

ECCN Code :

EAR99

Width :

5mm

Pulsed Drain Current-Max (IDM) :

280A

Factory Lead Time :

11 Weeks

Power Dissipation :

214W

Gate to Source Voltage (Vgs) :

25V

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Fall Time (Typ) :

160 ns

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Series :

QFET®

Dual Supply Voltage :

100V

Lead Free :

Lead Free

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

3

Published :

2000

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

23m Ω @ 35A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Vgs (Max) :

±25V

Power Dissipation-Max :

214W Tc

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)