FQA70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Turn-Off Delay Time :

130 ns

Rise Time :

470ns

Power Dissipation-Max :

214W Tc

Series :

QFET®

Packaging :

Tube

Mount :

Through Hole

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

280A

Width :

5mm

Dual Supply Voltage :

100V

Height :

18.9mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rds On (Max) @ Id, Vgs :

23m Ω @ 35A, 10V

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Power Dissipation :

214W

Turn On Delay Time :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Current Rating :

70A

Threshold Voltage :

4V

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

160 ns

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Gate to Source Voltage (Vgs) :

25V

Factory Lead Time :

11 Weeks

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

70A

Weight :

6.401g

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Number of Pins :

3

Number of Terminations :

3

Transistor Application :

SWITCHING

Voltage - Rated DC :

100V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2000

Package / Case :

TO-3P-3, SC-65-3

Length :

15.8mm

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

4 V

Resistance :

23mOhm