FQA70N10
- Mfr.Part #
- FQA70N10
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 70A TO3PN
- Stock
- 7,697
- In Stock :
- 7,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 280A
- Continuous Drain Current (ID) :
- 70A
- Operating Temperature :
- -55°C~175°C TJ
- Height :
- 18.9mm
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 4 V
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Published :
- 2000
- Weight :
- 6.401g
- Factory Lead Time :
- 11 Weeks
- Vgs (Max) :
- ±25V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Threshold Voltage :
- 4V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Dual Supply Voltage :
- 100V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Mount :
- Through Hole
- Power Dissipation-Max :
- 214W Tc
- Turn On Delay Time :
- 30 ns
- Length :
- 15.8mm
- Current Rating :
- 70A
- Packaging :
- Tube
- Resistance :
- 23mOhm
- Number of Pins :
- 3
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Package / Case :
- TO-3P-3, SC-65-3
- Turn-Off Delay Time :
- 130 ns
- Power Dissipation :
- 214W
- Lifecycle Status :
- ACTIVE (Last Updated: 7 hours ago)
- Fall Time (Typ) :
- 160 ns
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 35A, 10V
- Rise Time :
- 470ns
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Series :
- QFET®
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Width :
- 5mm
- Gate to Source Voltage (Vgs) :
- 25V
- Datasheets
- FQA70N10

N-Channel Tube 23m Ω @ 35A, 10V ±25V 3300pF @ 25V 110nC @ 10V TO-3P-3, SC-65-3
FQA70N10 Description
This N-Channel cnhancement mode power MOSFET isproduced usingFairchldScmiconductors proprietary planar stripeand DMOS technology. This advanced MOSFET technoliogy has been cspecialiy tailored to reduce on-state resistance,and toprovide supenior switchingperformance and high awalanche energy sirength. These devices are suitable for switched mode power supples,cudio ampiifier, DC motor control, and variable switching power applications.
FQA70N10 Features
70A, 100 V, RDsjanj) = 23 m
(Max) @Ves = 10v,l= 35A
Low Gate Charge (Typ.85 nC)
Low Crss ( Typ.150 pF)
100% Awalanche Tested
175C Maximum Junction
Temperature Rating
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