FQA70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Length :

15.8mm

Gate to Source Voltage (Vgs) :

25V

Nominal Vgs :

4 V

Fall Time (Typ) :

160 ns

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Threshold Voltage :

4V

Power Dissipation :

214W

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Pbfree Code :

yes

Rise Time :

470ns

Width :

5mm

Pulsed Drain Current-Max (IDM) :

280A

FET Type :

N-Channel

Resistance :

23mOhm

Voltage - Rated DC :

100V

Height :

18.9mm

Power Dissipation-Max :

214W Tc

Packaging :

Tube

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Turn-Off Delay Time :

130 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2000

Continuous Drain Current (ID) :

70A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

11 Weeks

REACH SVHC :

No SVHC

Current Rating :

70A

Radiation Hardening :

No

Dual Supply Voltage :

100V

Number of Terminations :

3

Element Configuration :

Single

Transistor Application :

SWITCHING

Turn On Delay Time :

30 ns

Drain to Source Breakdown Voltage :

100V

Series :

QFET®

Rds On (Max) @ Id, Vgs :

23m Ω @ 35A, 10V

Lead Free :

Lead Free

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Weight :

6.401g

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Mount :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

RoHS Status :

ROHS3 Compliant

Number of Pins :

3