FQA70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

11 Weeks

Radiation Hardening :

No

Nominal Vgs :

4 V

Number of Pins :

3

Power Dissipation-Max :

214W Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

280A

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Rise Time :

470ns

Continuous Drain Current (ID) :

70A

Vgs (Max) :

±25V

Width :

5mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

15.8mm

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Resistance :

23mOhm

Series :

QFET®

Dual Supply Voltage :

100V

Drain to Source Breakdown Voltage :

100V

Element Configuration :

Single

Number of Terminations :

3

Lead Free :

Lead Free

Package / Case :

TO-3P-3, SC-65-3

Rds On (Max) @ Id, Vgs :

23m Ω @ 35A, 10V

Height :

18.9mm

Mount :

Through Hole

Current Rating :

70A

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2000

Turn On Delay Time :

30 ns

FET Type :

N-Channel

Fall Time (Typ) :

160 ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

130 ns

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Weight :

6.401g

Voltage - Rated DC :

100V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Power Dissipation :

214W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)