FQA70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

470ns

Length :

15.8mm

Turn On Delay Time :

30 ns

Pbfree Code :

yes

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

280A

Turn-Off Delay Time :

130 ns

Fall Time (Typ) :

160 ns

Packaging :

Tube

Dual Supply Voltage :

100V

Continuous Drain Current (ID) :

70A

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

23m Ω @ 35A, 10V

ECCN Code :

EAR99

Factory Lead Time :

11 Weeks

Drain to Source Breakdown Voltage :

100V

Terminal Finish :

Tin (Sn)

Published :

2000

Height :

18.9mm

Package / Case :

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±25V

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Voltage - Rated DC :

100V

Current Rating :

70A

Weight :

6.401g

Resistance :

23mOhm

Lead Free :

Lead Free

Power Dissipation :

214W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation-Max :

214W Tc

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Elements :

1

Width :

5mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Radiation Hardening :

No

Number of Pins :

3

Nominal Vgs :

4 V