FQA70N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Number of Elements :

1

Vgs (Max) :

±25V

Turn-Off Delay Time :

130 ns

Pulsed Drain Current-Max (IDM) :

280A

Operating Temperature :

-55°C~175°C TJ

Rise Time :

470ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Current Rating :

70A

Turn On Delay Time :

30 ns

Number of Terminations :

3

Fall Time (Typ) :

160 ns

Radiation Hardening :

No

Length :

15.8mm

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Element Configuration :

Single

Threshold Voltage :

4V

Number of Pins :

3

JESD-609 Code :

e3

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

70A Tc

FET Type :

N-Channel

Dual Supply Voltage :

100V

Resistance :

23mOhm

Width :

5mm

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-3P-3, SC-65-3

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Transistor Element Material :

SILICON

Factory Lead Time :

11 Weeks

Power Dissipation :

214W

Nominal Vgs :

4 V

Voltage - Rated DC :

100V

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

23m Ω @ 35A, 10V

Height :

18.9mm

Packaging :

Tube

Transistor Application :

SWITCHING

Power Dissipation-Max :

214W Tc

Drain to Source Breakdown Voltage :

100V

Published :

2000

REACH SVHC :

No SVHC

Weight :

6.401g