FQA70N15

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Voltage - Rated DC :

150V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

28m Ω @ 35A, 10V

Element Configuration :

Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

175nC @ 10V

Rise Time :

420ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Series :

QFET®

Package / Case :

TO-3P-3, SC-65-3

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

340 ns

Pbfree Code :

yes

Width :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Pulsed Drain Current-Max (IDM) :

280A

Number of Pins :

3

Current Rating :

70A

Drain-source On Resistance-Max :

0.028Ohm

REACH SVHC :

No SVHC

Power Dissipation-Max :

330W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Continuous Drain Current (ID) :

70A

Mount :

Through Hole

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Length :

15.8mm

Height :

18.9mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

330W

Threshold Voltage :

4V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 25V

Turn On Delay Time :

60 ns

Published :

2000

Transistor Application :

SWITCHING

Fall Time (Typ) :

290 ns

Weight :

6.401g

Drain to Source Breakdown Voltage :

150V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Gate to Source Voltage (Vgs) :

25V

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Element Material :

SILICON