FQA70N15
- Mfr.Part #
- FQA70N15
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 70A TO3PN
- Stock
- 7,216
- In Stock :
- 7,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 70A
- Continuous Drain Current (ID) :
- 70A
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 150V
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.028Ohm
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 280A
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 175nC @ 10V
- Lead Free :
- Lead Free
- Length :
- 15.8mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 25V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 420ns
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- ECCN Code :
- EAR99
- Weight :
- 6.401g
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 340 ns
- Power Dissipation :
- 330W
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Series :
- QFET®
- Fall Time (Typ) :
- 290 ns
- Drain to Source Breakdown Voltage :
- 150V
- Threshold Voltage :
- 4V
- Published :
- 2000
- Turn On Delay Time :
- 60 ns
- Packaging :
- Tube
- Power Dissipation-Max :
- 330W Tc
- Height :
- 18.9mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-3P-3, SC-65-3
- Width :
- 5mm
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 35A, 10V
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Datasheets
- FQA70N15

N-Channel Tube 28m Ω @ 35A, 10V ±25V 5400pF @ 25V 175nC @ 10V TO-3P-3, SC-65-3
FQA70N15 Description
This N-channel enhanced mode power MOSFET FQA70N15 is a proprietary planar stripe and DMOS technology produced by Xiantong Semiconductor. This advanced MosFeT technology is tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
FQA70N15 Features
·70A100VRpsion)=28mΩ(Max)@VGs=10V=35A
·Low Gate Charge(Typ.135nC)
·LowCrss(Typ.135pF)
·100% Avalanche Tested
·175℃ Maximum Junction Temperature Rating
FQA70N15 Applications
Switched Mode Power Supplies
Audio Amplifiers
DC Motor control
Variable Switching Power Applications
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