FQA7N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation-Max :

198W Tc

Package / Case :

TO-3P-3, SC-65-3

Pbfree Code :

yes

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

28A

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

580 mJ

Terminal Position :

Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

7A

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1.68pF @ 25V

Pin Count :

3

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

800V

Terminal Finish :

MATTE TIN

Series :

QFET®

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

Not Applicable