FQA70N15
- Mfr.Part #
- FQA70N15
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 7,216
- In Stock :
- 7,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±25V
- Package / Case :
- TO-3P-3, SC-65-3
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 60 ns
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Threshold Voltage :
- 4V
- Length :
- 15.8mm
- Factory Lead Time :
- 8 Weeks
- Drain-source On Resistance-Max :
- 0.028Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 175nC @ 10V
- Current Rating :
- 70A
- Pulsed Drain Current-Max (IDM) :
- 280A
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 330W
- Published :
- 2000
- Height :
- 18.9mm
- Number of Pins :
- 3
- Voltage - Rated DC :
- 150V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 340 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Lead Free :
- Lead Free
- Weight :
- 6.401g
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 330W Tc
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 25V
- Width :
- 5mm
- Rise Time :
- 420ns
- Fall Time (Typ) :
- 290 ns
- ECCN Code :
- EAR99
- Series :
- QFET®
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 150V
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 35A, 10V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 70A
- FET Type :
- N-Channel
- Datasheets
- FQA70N15

N-Channel Tube 28m Ω @ 35A, 10V ±25V 5400pF @ 25V 175nC @ 10V TO-3P-3, SC-65-3
FQA70N15 Description
This N-channel enhanced mode power MOSFET FQA70N15 is a proprietary planar stripe and DMOS technology produced by Xiantong Semiconductor. This advanced MosFeT technology is tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
FQA70N15 Features
·70A100VRpsion)=28mΩ(Max)@VGs=10V=35A
·Low Gate Charge(Typ.135nC)
·LowCrss(Typ.135pF)
·100% Avalanche Tested
·175℃ Maximum Junction Temperature Rating
FQA70N15 Applications
Switched Mode Power Supplies
Audio Amplifiers
DC Motor control
Variable Switching Power Applications
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