FQA70N15
- Mfr.Part #
- FQA70N15
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 7,216
- In Stock :
- 7,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5400pF @ 25V
- Height :
- 18.9mm
- Current Rating :
- 70A
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Continuous Drain Current (ID) :
- 70A
- Power Dissipation-Max :
- 330W Tc
- Threshold Voltage :
- 4V
- Drain to Source Breakdown Voltage :
- 150V
- Turn-Off Delay Time :
- 340 ns
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Vgs (Max) :
- ±25V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Width :
- 5mm
- Packaging :
- Tube
- Package / Case :
- TO-3P-3, SC-65-3
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Rise Time :
- 420ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 15.8mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 175nC @ 10V
- Series :
- QFET®
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 35A, 10V
- Turn On Delay Time :
- 60 ns
- Power Dissipation :
- 330W
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- 150V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 8 Weeks
- Fall Time (Typ) :
- 290 ns
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 25V
- Weight :
- 6.401g
- Published :
- 2000
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 280A
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.028Ohm
- Mounting Type :
- Through Hole
- Datasheets
- FQA70N15

N-Channel Tube 28m Ω @ 35A, 10V ±25V 5400pF @ 25V 175nC @ 10V TO-3P-3, SC-65-3
FQA70N15 Description
This N-channel enhanced mode power MOSFET FQA70N15 is a proprietary planar stripe and DMOS technology produced by Xiantong Semiconductor. This advanced MosFeT technology is tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching power supplies, audio amplifiers, DC motor control and variable switching power supply applications.
FQA70N15 Features
·70A100VRpsion)=28mΩ(Max)@VGs=10V=35A
·Low Gate Charge(Typ.135nC)
·LowCrss(Typ.135pF)
·100% Avalanche Tested
·175℃ Maximum Junction Temperature Rating
FQA70N15 Applications
Switched Mode Power Supplies
Audio Amplifiers
DC Motor control
Variable Switching Power Applications
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