FPNH10

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Continuous Collector Current :

50mA

Frequency - Transition :

650MHz

Voltage - Rated DC :

25V

hFE Min :

60

Supplier Device Package :

TO-92-3

Collector Emitter Voltage (VCEO) :

25V

Collector Emitter Breakdown Voltage :

25V

Power - Max :

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Lead Free :

Lead Free

Number of Pins :

3

Min Operating Temperature :

-55°C

Power Dissipation :

350mW

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Polarity :

NPN

Transistor Type :

NPN

Element Configuration :

Single

Max Operating Temperature :

150°C

Max Collector Current :

50mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Max Frequency :

650MHz

Packaging :

Bulk

Current Rating :

50mA

Frequency :

650MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

25V

Gain Bandwidth Product :

650MHz

Current - Collector (Ic) (Max) :

50mA

Max Power Dissipation :

350mW

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Collector Base Voltage (VCBO) :

30V

Emitter Base Voltage (VEBO) :

3V