FPNH10

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Polarity :

NPN

Power - Max :

350mW

Frequency :

650MHz

Collector Emitter Breakdown Voltage :

25V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

NPN

Max Frequency :

650MHz

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Current Rating :

50mA

Collector Base Voltage (VCBO) :

30V

Max Power Dissipation :

350mW

Number of Elements :

1

Mounting Type :

Through Hole

Element Configuration :

Single

Current - Collector (Ic) (Max) :

50mA

Gain Bandwidth Product :

650MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Max Operating Temperature :

150°C

Frequency - Transition :

650MHz

Emitter Base Voltage (VEBO) :

3V

Packaging :

Bulk

Supplier Device Package :

TO-92-3

Voltage - Rated DC :

25V

Number of Pins :

3

RoHS Status :

RoHS Compliant

hFE Min :

60

Lead Free :

Lead Free

Power Dissipation :

350mW

Max Collector Current :

50mA

Continuous Collector Current :

50mA

Voltage - Collector Emitter Breakdown (Max) :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

25V