FMMT918TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

3V

JESD-30 Code :

R-PDSO-G3

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

600MHz

Height :

1mm

Reach Compliance Code :

Unknown

Voltage - Rated DC :

15V

Collector Emitter Breakdown Voltage :

15V

Collector Base Voltage (VCBO) :

30V

Max Power Dissipation :

330mW

Continuous Collector Current :

100mA

ECCN Code :

EAR99

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

600MHz

Packaging :

Cut Tape (CT)

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 3mA 1V

Collector-Base Capacitance-Max :

3pF

Published :

1997

JESD-609 Code :

e3

HTS Code :

8541.21.00.75

Lead Free :

Lead Free

Max Breakdown Voltage :

15V

Weight :

7.994566mg

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Base Part Number :

FMMT918

Number of Elements :

1

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

15V

Terminal Form :

Gull wing

Terminal Position :

Dual

RoHS Status :

RoHS Compliant

Noise Figure (dB Typ @ f) :

6dB @ 60MHz

Width :

1.4mm

Length :

3.05mm

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Current Rating :

100mA

Mounting Type :

Surface Mount

Gain :

15dB

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN