FMMT413TA
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- Mfr.Part #
- FMMT413TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT23-3
- Stock
- 35,664
- In Stock ：
- 35,664
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN - Avalanche Mode
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Terminal Form :
- Gull wing
- Height :
- 1mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 50V
- Continuous Collector Current :
- 100mA
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Power Dissipation :
- 330mW
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 1mA, 10mA
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 150V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 50V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 150MHz
- Length :
- 3.05mm
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Application :
- SWITCHING
- Current Rating :
- 100mA
- Published :
- 2006
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 10mA 10V
- Width :
- 1.4mm
- Base Part Number :
- FMMT413
- Polarity :
- NPN
- Terminal Position :
- Dual
- Transition Frequency :
- 150MHz
- Weight :
- 7.994566mg
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 150mV
- Mount :
- Surface Mount
- Datasheets
- FMMT413TA
NPN - Avalanche Mode -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT413TA Overview
DC current gain in this device equals 50 @ 10mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 150mV @ 1mA, 10mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
FMMT413TA Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 150MHz
FMMT413TA Applications
There are a lot of Diodes Incorporated
FMMT413TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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