FMMT415TD
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- Mfr.Part #
- FMMT415TD
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A SOT23-3
- Stock
- 2,682
- In Stock ：
- 2,682
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 500mA
- Frequency :
- 40MHz
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- 500mV
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 500mA
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 100V
- Element Configuration :
- Single
- Max Power Dissipation :
- 330mW
- Gain Bandwidth Product :
- 40MHz
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 330mW
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 100V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- FMMT415
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 10mA 10V
- Pbfree Code :
- yes
- Transition Frequency :
- 40MHz
- ECCN Code :
- EAR99
- Published :
- 2012
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Length :
- 3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 320V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN - Avalanche Mode
- Collector Emitter Breakdown Voltage :
- 100V
- Packaging :
- Tape and Reel (TR)
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Terminal Position :
- Dual
- Height :
- 1.1mm
- Datasheets
- FMMT415TD
NPN - Avalanche Mode -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT415TD Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 10mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 1mA, 10mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
FMMT415TD Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
FMMT415TD Applications
There are a lot of Diodes Incorporated
FMMT415TD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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