FJPF5027RYDTU
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- Mfr.Part #
- FJPF5027RYDTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220F-3
- Stock
- 11,277
- In Stock ：
- 11,277
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Base Part Number :
- FJPF5027
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 200mA 5V
- Package / Case :
- TO-220-3 Full Pack
- Power - Max :
- 40W
- Transistor Type :
- NPN
- Current - Collector (Ic) (Max) :
- 3A
- Frequency - Transition :
- 15MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 800V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Datasheets
- FJPF5027RYDTU
NPN 150°C TJ 10μA ICBO TO-220-3 Full Pack Tube Through Hole
FJPF5027RYDTU Overview
In this device, the DC current gain is 15 @ 200mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 300mA, 1.5A.The device exhibits a collector-emitter breakdown at 800V.
FJPF5027RYDTU Features
the DC current gain for this device is 15 @ 200mA 5V
the vce saturation(Max) is 2V @ 300mA, 1.5A
FJPF5027RYDTU Applications
There are a lot of ON Semiconductor
FJPF5027RYDTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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