FJPF13007H1TTU
- Mfr.Part #
- FJPF13007H1TTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A TO220F-3
- Stock
- 100
- In Stock :
- 100
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 5
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Max Power Dissipation :
- 40W
- Weight :
- 2.27g
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Base Voltage (VCBO) :
- 700V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Case Connection :
- Isolated
- Element Configuration :
- Single
- Transition Frequency :
- 4MHz
- Power Dissipation :
- 40W
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 4MHz
- Collector Emitter Voltage (VCEO) :
- 400V
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Max Collector Current :
- 8A
- Terminal Finish :
- Tin (Sn)
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 2A 5V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Base Part Number :
- FJPF13007
- JEDEC-95 Code :
- TO-220AB
- Frequency :
- 4MHz
- Package / Case :
- TO-220-3 Full Pack
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 400V
- Datasheets
- FJPF13007H1TTU

NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF13007H1TTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 2A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2A, 8A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.A transition frequency of 4MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
FJPF13007H1TTU Features
the DC current gain for this device is 15 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJPF13007H1TTU Applications
There are a lot of ON Semiconductor
FJPF13007H1TTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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