FJPF13007H2
- Mfr.Part #
- FJPF13007H2
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A TO220F-3
- Stock
- 7,428
- In Stock :
- 7,428
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Width :
- 4.7mm
- Voltage - Rated DC :
- 400V
- Weight :
- 2.27g
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 5 Weeks
- Current Rating :
- 8A
- Height :
- 15.87mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 26 @ 2A 5V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Frequency :
- 4MHz
- Length :
- 10.16mm
- Power Dissipation :
- 40W
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 4MHz
- hFE Min :
- 5
- Collector Emitter Voltage (VCEO) :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Package / Case :
- TO-220-3 Full Pack
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Transition Frequency :
- 4MHz
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Saturation Voltage :
- 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- FJPF13007
- Max Power Dissipation :
- 40W
- Case Connection :
- Isolated
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 8A
- Datasheets
- FJPF13007H2

NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF13007H2TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 26 @ 2A 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 2A, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 4MHz.A maximum collector current of 8A volts can be achieved.
FJPF13007H2TU Features
the DC current gain for this device is 26 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz
FJPF13007H2TU Applications
There are a lot of ON Semiconductor
FJPF13007H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| FJPF13007 | onsemi | 18,421 | TRANS NPN 400V 8A TO220F-3 |
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