FJPF13009H1TU

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Mfr.Part #
FJPF13009H1TU
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack, Formed Leads
Datasheet
Download
Description
TRANS NPN 400V 12A TO220F-3
Stock
30,538
In Stock :
30,538

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
4MHz
Weight :
2.27g
Emitter Base Voltage (VEBO) :
9V
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
700V
Transistor Type :
NPN
Case Connection :
Isolated
Transition Frequency :
4MHz
Collector Emitter Voltage (VCEO) :
400V
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Terminal Finish :
Tin (Sn)
Mounting Type :
Through Hole
Max Collector Current :
12A
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Pbfree Code :
yes
Polarity/Channel Type :
NPN
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Max Power Dissipation :
50W
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 8A 5V
Collector Emitter Saturation Voltage :
3V
hFE Min :
6
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
4.9mm
Element Configuration :
Single
Power Dissipation :
50W
Gain Bandwidth Product :
4MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Mount :
Through Hole
Package / Case :
TO-220-3 Full Pack, Formed Leads
Length :
10.36mm
Height :
16.07mm
Vce Saturation (Max) @ Ib, Ic :
3V @ 3A, 12A
JEDEC-95 Code :
TO-220AB
Factory Lead Time :
11 Weeks
Base Part Number :
FJPF13009
Collector Emitter Breakdown Voltage :
400V
Number of Terminations :
3
Introducing Transistors - Bipolar (BJT) - Single onsemi FJPF13009H1TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Formed Leads, Base Part Number:FJPF13009, Number of Terminations:3, FJPF13009H1TU pinout, FJPF13009H1TU datasheet PDF, FJPF13009H1TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJPF13009H1TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJPF13009H1TU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack, Formed Leads Tube Through Hole

FJPF13009H1TU Overview


This device has a DC current gain of 6 @ 8A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 3V.A VCE saturation (Max) of 3V @ 3A, 12A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 12A volts is possible.

FJPF13009H1TU Features


the DC current gain for this device is 6 @ 8A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


FJPF13009H1TU Applications


There are a lot of ON Semiconductor
FJPF13009H1TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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