FJPF13009H1TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Collector Emitter Saturation Voltage :

3V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Mounting Type :

Through Hole

hFE Min :

6

Transition Frequency :

4MHz

Collector Emitter Breakdown Voltage :

400V

Length :

10.36mm

Factory Lead Time :

11 Weeks

Max Collector Current :

12A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

6 @ 8A 5V

ECCN Code :

EAR99

Packaging :

Tube

Mount :

Through Hole

Reach Compliance Code :

not_compliant

Collector Emitter Voltage (VCEO) :

400V

Vce Saturation (Max) @ Ib, Ic :

3V @ 3A, 12A

Gain Bandwidth Product :

4MHz

Transistor Type :

NPN

Operating Temperature :

150°C TJ

Element Configuration :

Single

Transistor Application :

SWITCHING

Base Part Number :

FJPF13009

Weight :

2.27g

Number of Terminations :

3

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Max Power Dissipation :

50W

Package / Case :

TO-220-3 Full Pack, Formed Leads

Polarity/Channel Type :

NPN

Frequency :

4MHz

Width :

4.9mm

Number of Pins :

3

Emitter Base Voltage (VEBO) :

9V

Height :

16.07mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

700V

Power Dissipation :

50W