FJPF13009H2TU
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- Mfr.Part #
- FJPF13009H2TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220F-3
- Stock
- 1,000
- In Stock ：
- 1,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- FJPF13009
- hFE Min :
- 6
- Max Collector Current :
- 12A
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 700V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Frequency :
- 4MHz
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 4MHz
- Lead Free :
- Lead Free
- Case Connection :
- Isolated
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 50W
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 9V
- Gain Bandwidth Product :
- 4MHz
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3 Full Pack
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 400V
- Collector Emitter Voltage (VCEO) :
- 400V
- Voltage - Rated DC :
- 400V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Current Rating :
- 12A
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Power Dissipation :
- 50W
- Weight :
- 2.27g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Published :
- 2011
- Mount :
- Through Hole
- Datasheets
- FJPF13009H2TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF13009H2TU Overview
In this device, the DC current gain is 8 @ 5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 3A, 12A.With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 12A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
FJPF13009H2TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJPF13009H2TU Applications
There are a lot of ON Semiconductor
FJPF13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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