FJPF13009H2TU
- Mfr.Part #
- FJPF13009H2TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220F-3
- Stock
- 44,146
- In Stock :
- 44,146
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1V
- Gain Bandwidth Product :
- 4MHz
- Package / Case :
- TO-220-3 Full Pack
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 6
- JEDEC-95 Code :
- TO-220AB
- Transition Frequency :
- 4MHz
- Collector Base Voltage (VCBO) :
- 700V
- Weight :
- 2.27g
- Base Part Number :
- FJPF13009
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Emitter Base Voltage (VEBO) :
- 9V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Power Dissipation :
- 50W
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 400V
- Max Collector Current :
- 12A
- Frequency :
- 4MHz
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Case Connection :
- Isolated
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 400V
- Current Rating :
- 12A
- Operating Temperature :
- 150°C TJ
- Published :
- 2011
- Max Power Dissipation :
- 50W
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 400V
- Mounting Type :
- Through Hole
- Datasheets
- FJPF13009H2TU

NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF13009H2TU Overview
In this device, the DC current gain is 8 @ 5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 3A, 12A.With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 12A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
FJPF13009H2TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJPF13009H2TU Applications
There are a lot of ON Semiconductor
FJPF13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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