FJPF5027OTU
- Mfr.Part #
- FJPF5027OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220F-3
- Stock
- 2,313
- In Stock :
- 2,313
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Weight :
- 2.27g
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Collector Base Voltage (VCBO) :
- 1.1kV
- Mount :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Voltage - Rated DC :
- 800V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Frequency :
- 15MHz
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Base Part Number :
- FJPF5027
- Collector Emitter Saturation Voltage :
- 2V
- hFE Min :
- 10
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transition Frequency :
- 15MHz
- Element Configuration :
- Single
- Length :
- 10.16mm
- ECCN Code :
- EAR99
- Published :
- 2003
- Height :
- 15.87mm
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3 Full Pack
- Max Collector Current :
- 3A
- Factory Lead Time :
- 14 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Width :
- 4.7mm
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 3A
- Collector Emitter Breakdown Voltage :
- 800V
- Max Power Dissipation :
- 40W
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Power Dissipation :
- 40W
- Datasheets
- FJPF5027OTU
FJPF5027OTU Documents

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF5027OTU Overview
In this device, the DC current gain is 20 @ 200mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 300mA, 1.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).15MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
FJPF5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJPF5027OTU Applications
There are a lot of ON Semiconductor
FJPF5027OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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