FJPF5027OTU
- Mfr.Part #
- FJPF5027OTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 3A TO220F-3
- Stock
- 2,313
- In Stock :
- 2,313
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.16mm
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 1.1kV
- Number of Terminations :
- 3
- Transition Frequency :
- 15MHz
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 40W
- Collector Emitter Saturation Voltage :
- 2V
- ECCN Code :
- EAR99
- Weight :
- 2.27g
- Collector Emitter Voltage (VCEO) :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Package / Case :
- TO-220-3 Full Pack
- Current Rating :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Height :
- 15.87mm
- Collector Emitter Breakdown Voltage :
- 800V
- Case Connection :
- Isolated
- Width :
- 4.7mm
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 800V
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Published :
- 2003
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 3A
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 15MHz
- Number of Elements :
- 1
- Power Dissipation :
- 40W
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- FJPF5027
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- hFE Min :
- 10
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Factory Lead Time :
- 14 Weeks
- Datasheets
- FJPF5027OTU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF5027OTU Overview
In this device, the DC current gain is 20 @ 200mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 300mA, 1.5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).15MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
FJPF5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz
FJPF5027OTU Applications
There are a lot of ON Semiconductor
FJPF5027OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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