FJPF3305H1TU
- Mfr.Part #
- FJPF3305H1TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220F-3
- Stock
- 6,307
- In Stock :
- 6,307
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Base Voltage (VCBO) :
- 700V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- Factory Lead Time :
- 2 Weeks
- Weight :
- 2.27g
- hFE Min :
- 8
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 4A
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.7mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Current Rating :
- 4A
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 30W
- Power Dissipation :
- 30W
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Length :
- 10.16mm
- Max Collector Current :
- 4A
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 9V
- Voltage - Rated DC :
- 400V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Frequency :
- 4MHz
- Polarity/Channel Type :
- NPN
- Published :
- 2004
- Package / Case :
- TO-220-3 Full Pack
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Height :
- 15.87mm
- Case Connection :
- Isolated
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 19 @ 1A 5V
- Collector Emitter Voltage (VCEO) :
- 400V
- Datasheets
- FJPF3305H1TU

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF3305H1TU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 19 @ 1A 5V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 4A volts.
FJPF3305H1TU Features
the DC current gain for this device is 19 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
FJPF3305H1TU Applications
There are a lot of ON Semiconductor
FJPF3305H1TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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