FJPF3305H1TU

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Mfr.Part #
FJPF3305H1TU
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS NPN 400V 4A TO220F-3
Stock
6,307
In Stock :
6,307

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JEDEC-95 Code :
TO-220AB
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Collector Base Voltage (VCBO) :
700V
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1V
Factory Lead Time :
2 Weeks
Weight :
2.27g
hFE Min :
8
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
1V @ 1A, 4A
RoHS Status :
ROHS3 Compliant
Width :
4.7mm
Lead Free :
Lead Free
Pbfree Code :
yes
Current Rating :
4A
JESD-609 Code :
e3
Radiation Hardening :
No
Number of Pins :
3
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
30W
Power Dissipation :
30W
Terminal Finish :
Tin (Sn)
ECCN Code :
EAR99
Length :
10.16mm
Max Collector Current :
4A
Transistor Application :
SWITCHING
Current - Collector Cutoff (Max) :
1μA ICBO
Packaging :
Tube
Collector Emitter Breakdown Voltage :
400V
Emitter Base Voltage (VEBO) :
9V
Voltage - Rated DC :
400V
Number of Terminations :
3
Mounting Type :
Through Hole
Frequency :
4MHz
Polarity/Channel Type :
NPN
Published :
2004
Package / Case :
TO-220-3 Full Pack
Operating Temperature :
150°C TJ
Transistor Element Material :
SILICON
Height :
15.87mm
Case Connection :
Isolated
Transistor Type :
NPN
Gain Bandwidth Product :
4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
19 @ 1A 5V
Collector Emitter Voltage (VCEO) :
400V
Datasheets
FJPF3305H1TU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJPF3305H1TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, FJPF3305H1TU pinout, FJPF3305H1TU datasheet PDF, FJPF3305H1TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJPF3305H1TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJPF3305H1TU


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole

FJPF3305H1TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 19 @ 1A 5V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 4A volts.

FJPF3305H1TU Features


the DC current gain for this device is 19 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A


FJPF3305H1TU Applications


There are a lot of ON Semiconductor
FJPF3305H1TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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