FJPF2145TU
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- Mfr.Part #
- FJPF2145TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220F-3
- Stock
- 2,619
- In Stock ：
- 2,619
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 1.1kV
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Type :
- NPN
- Package / Case :
- TO-220-3 Full Pack
- Factory Lead Time :
- 5 Weeks
- Emitter Base Voltage (VEBO) :
- 7V
- Weight :
- 2.27g
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 159mV
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~125°C TJ
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Series :
- ESBC™
- Published :
- 2013
- Gain Bandwidth Product :
- 15MHz
- Transition Frequency :
- 28.4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Case Connection :
- Isolated
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 5A
- Max Power Dissipation :
- 40W
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 800V
- Length :
- 10.36mm
- Width :
- 4.9mm
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Height :
- 16.07mm
- Collector Emitter Breakdown Voltage :
- 800V
- hFE Min :
- 20
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Datasheets
- FJPF2145TU
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF2145TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 200mA 5V.With a collector emitter saturation voltage of 159mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 28.4MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
FJPF2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 159mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJPF2145TU Applications
There are a lot of ON Semiconductor
FJPF2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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