FJPF2145TU
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- Mfr.Part #
- FJPF2145TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220F-3
- Stock
- 2,619
- In Stock ：
- 2,619
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2013
- hFE Min :
- 20
- Collector Emitter Voltage (VCEO) :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 40W
- Emitter Base Voltage (VEBO) :
- 7V
- Operating Temperature :
- -55°C~125°C TJ
- Width :
- 4.9mm
- Collector Emitter Saturation Voltage :
- 159mV
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Case Connection :
- Isolated
- Height :
- 16.07mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 1.1kV
- Packaging :
- Tube
- Max Power Dissipation :
- 40W
- Collector Emitter Breakdown Voltage :
- 800V
- Transition Frequency :
- 28.4MHz
- Terminal Finish :
- Tin (Sn)
- Length :
- 10.36mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Mount :
- Through Hole
- Weight :
- 2.27g
- Series :
- ESBC™
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Factory Lead Time :
- 5 Weeks
- Number of Elements :
- 1
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Max Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Gate to Source Voltage (Vgs) :
- 20V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FJPF2145TU
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF2145TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 200mA 5V.With a collector emitter saturation voltage of 159mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 28.4MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
FJPF2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 159mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJPF2145TU Applications
There are a lot of ON Semiconductor
FJPF2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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