FJPF2145TU
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- Mfr.Part #
- FJPF2145TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220F-3
- Stock
- 2,619
- In Stock ：
- 2,619
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Published :
- 2013
- Package / Case :
- TO-220-3 Full Pack
- Collector Base Voltage (VCBO) :
- 1.1kV
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Packaging :
- Tube
- Weight :
- 2.27g
- Height :
- 16.07mm
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 40W
- Transition Frequency :
- 28.4MHz
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Max Collector Current :
- 5A
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Power Dissipation :
- 40W
- hFE Min :
- 20
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Length :
- 10.36mm
- Emitter Base Voltage (VEBO) :
- 7V
- Operating Temperature :
- -55°C~125°C TJ
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 800V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Series :
- ESBC™
- Mount :
- Through Hole
- Factory Lead Time :
- 5 Weeks
- Collector Emitter Saturation Voltage :
- 159mV
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Width :
- 4.9mm
- Datasheets
- FJPF2145TU
FJPF2145TU Documents
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
FJPF2145TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 200mA 5V.With a collector emitter saturation voltage of 159mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 28.4MHz is present in the part.Collector current can be as low as 5A volts at its maximum.
FJPF2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 159mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJPF2145TU Applications
There are a lot of ON Semiconductor
FJPF2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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