FJP5554TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

15 Weeks

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

250μA

Number of Terminations :

3

JESD-609 Code :

e3

Element Configuration :

Single

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1A, 3.5A

Collector Emitter Breakdown Voltage :

400V

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

400V

Packaging :

Tube

Polarity/Channel Type :

NPN

Max Collector Current :

4A

Voltage - Rated DC :

400V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 800mA 3V

Package / Case :

TO-220-3

Collector Emitter Saturation Voltage :

1.5V

Emitter Base Voltage (VEBO) :

15V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Number of Elements :

1

Weight :

1.8g

Transistor Type :

NPN

Power Dissipation :

70W

Terminal Finish :

Tin (Sn)

Collector Base Voltage (VCBO) :

1.05kV

Number of Pins :

3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Pbfree Code :

yes

hFE Min :

20

Max Power Dissipation :

70W

Current Rating :

4A