FJP5554TU
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- Mfr.Part #
- FJP5554TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO220-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 800mA 3V
- Collector Emitter Saturation Voltage :
- 1.5V
- Number of Elements :
- 1
- Current Rating :
- 4A
- hFE Min :
- 20
- Number of Terminations :
- 3
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 15V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Voltage - Rated DC :
- 400V
- Power Dissipation :
- 70W
- Max Collector Current :
- 4A
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 1.05kV
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1A, 3.5A
- Operating Temperature :
- 150°C TJ
- Weight :
- 1.8g
- Packaging :
- Tube
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 70W
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 400V
- Current - Collector Cutoff (Max) :
- 250μA
- Package / Case :
- TO-220-3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Datasheets
- FJP5554TU
FJP5554TU Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP5554TU Overview
This device has a DC current gain of 20 @ 800mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 15V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.The maximum collector current is 4A volts.
FJP5554TU Features
the DC current gain for this device is 20 @ 800mA 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1A, 3.5A
the emitter base voltage is kept at 15V
the current rating of this device is 4A
FJP5554TU Applications
There are a lot of ON Semiconductor
FJP5554TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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