FJP3835TU

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Mfr.Part #
FJP3835TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 120V 8A TO220-3
Stock
17,750
In Stock :
17,750

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Surface Mount :
No
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
120V
Frequency - Transition :
30MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 300mA, 3A
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Transition Frequency :
30MHz
Qualification Status :
COMMERCIAL
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-220AB
Configuration :
Single
Polarity/Channel Type :
NPN
Operating Temperature :
150°C TJ
Mounting Type :
Through Hole
Packaging :
Tube
Terminal Position :
Single
JESD-30 Code :
R-PSFM-T3
Current - Collector Cutoff (Max) :
100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 3A 4V
Current - Collector (Ic) (Max) :
8A
Number of Elements :
1
Transistor Application :
AMPLIFIER
Power - Max :
50W
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
Datasheets
FJP3835TU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP3835TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, FJP3835TU pinout, FJP3835TU datasheet PDF, FJP3835TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP3835TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP3835TU


NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP3835TU Overview


In this device, the DC current gain is 120 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 300mA, 3A.30MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 120V.

FJP3835TU Features


the DC current gain for this device is 120 @ 3A 4V
the vce saturation(Max) is 500mV @ 300mA, 3A
a transition frequency of 30MHz


FJP3835TU Applications


There are a lot of Rochester Electronics, LLC
FJP3835TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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