FJP3835TU

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Mfr.Part #
FJP3835TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 120V 8A TO220-3
Stock
17,750
In Stock :
17,750

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
500mV @ 300mA, 3A
Polarity/Channel Type :
NPN
Transistor Application :
AMPLIFIER
Number of Terminations :
3
Voltage - Collector Emitter Breakdown (Max) :
120V
Current - Collector Cutoff (Max) :
100μA ICBO
Configuration :
Single
JEDEC-95 Code :
TO-220AB
Surface Mount :
No
JESD-30 Code :
R-PSFM-T3
Transistor Type :
NPN
Terminal Position :
Single
Qualification Status :
COMMERCIAL
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3
Frequency - Transition :
30MHz
Pin Count :
3
Power - Max :
50W
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Current - Collector (Ic) (Max) :
8A
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Transition Frequency :
30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 3A 4V
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP3835TU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, FJP3835TU pinout, FJP3835TU datasheet PDF, FJP3835TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP3835TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP3835TU


NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP3835TU Overview


In this device, the DC current gain is 120 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 300mA, 3A.30MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 120V.

FJP3835TU Features


the DC current gain for this device is 120 @ 3A 4V
the vce saturation(Max) is 500mV @ 300mA, 3A
a transition frequency of 30MHz


FJP3835TU Applications


There are a lot of Rochester Electronics, LLC
FJP3835TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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