FJP3835TU
- Mfr.Part #
- FJP3835TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 8A TO220-3
- Stock
- 17,750
- In Stock :
- 17,750
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Surface Mount :
- No
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 120V
- Frequency - Transition :
- 30MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 300mA, 3A
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Transition Frequency :
- 30MHz
- Qualification Status :
- COMMERCIAL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 3A 4V
- Current - Collector (Ic) (Max) :
- 8A
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Power - Max :
- 50W
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Datasheets
- FJP3835TU

NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP3835TU Overview
In this device, the DC current gain is 120 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 300mA, 3A.30MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 120V.
FJP3835TU Features
the DC current gain for this device is 120 @ 3A 4V
the vce saturation(Max) is 500mV @ 300mA, 3A
a transition frequency of 30MHz
FJP3835TU Applications
There are a lot of Rochester Electronics, LLC
FJP3835TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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