FJP3307DTU

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Mfr.Part #
FJP3307DTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 8A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Mount :
Through Hole
ECCN Code :
EAR99
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-220-3
Factory Lead Time :
6 Weeks
Max Collector Current :
8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 5A 5V
JESD-609 Code :
e3
Max Power Dissipation :
80W
Current Rating :
8A
Published :
2013
Vce Saturation (Max) @ Ib, Ic :
3V @ 2A, 8A
Collector Emitter Voltage (VCEO) :
400V
Emitter Base Voltage (VEBO) :
9V
Number of Pins :
3
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Weight :
1.8g
Packaging :
Tube
Pbfree Code :
yes
Lead Free :
Lead Free
Element Configuration :
Single
JEDEC-95 Code :
TO-220AB
Power Dissipation :
80W
Mounting Type :
Through Hole
Voltage - Rated DC :
400V
Polarity/Channel Type :
NPN
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Transistor Type :
NPN
Number of Elements :
1
Number of Terminations :
3
Collector Base Voltage (VCBO) :
700V
hFE Min :
8
Datasheets
FJP3307DTU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP3307DTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, FJP3307DTU pinout, FJP3307DTU datasheet PDF, FJP3307DTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP3307DTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP3307DTU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP3307DTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5 @ 5A 5V.When VCE saturation is 3V @ 2A, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.A maximum collector current of 8A volts can be achieved.

FJP3307DTU Features


the DC current gain for this device is 5 @ 5A 5V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A


FJP3307DTU Applications


There are a lot of ON Semiconductor
FJP3307DTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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