FJP3307DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

3V @ 2A, 8A

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

1

Collector Emitter Breakdown Voltage :

400V

Element Configuration :

Single

Mount :

Through Hole

Polarity/Channel Type :

NPN

hFE Min :

8

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 5A 5V

Voltage - Rated DC :

400V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

400V

Factory Lead Time :

6 Weeks

Package / Case :

TO-220-3

Number of Pins :

3

Transistor Type :

NPN

Published :

2013

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

9V

Max Power Dissipation :

80W

Operating Temperature :

150°C TJ

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

8A

Weight :

1.8g

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Mounting Type :

Through Hole

Packaging :

Tube

Lead Free :

Lead Free

Power Dissipation :

80W

Max Collector Current :

8A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Collector Base Voltage (VCBO) :

700V