FJP3305H2TU

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Mfr.Part #
FJP3305H2TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220-3
Stock
27,592
In Stock :
27,592

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Element Configuration :
Single
Width :
4.83mm
Number of Terminations :
3
ECCN Code :
EAR99
JEDEC-95 Code :
TO-220AB
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
26 @ 1A 5V
Packaging :
Tube
Current - Collector Cutoff (Max) :
1μA ICBO
Number of Pins :
3
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Terminal Finish :
Tin (Sn)
Factory Lead Time :
2 Weeks
Voltage - Rated DC :
700V
Pbfree Code :
yes
Height :
16.51mm
Transistor Type :
NPN
Current Rating :
4A
Published :
2008
Transistor Application :
SWITCHING
Collector Emitter Breakdown Voltage :
400V
Transition Frequency :
4MHz
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Max Collector Current :
4A
Transistor Element Material :
SILICON
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
400V
Collector Emitter Saturation Voltage :
1V
Lead Free :
Lead Free
Polarity/Channel Type :
NPN
Collector Base Voltage (VCBO) :
700V
Max Power Dissipation :
75W
hFE Min :
8
Vce Saturation (Max) @ Ib, Ic :
1V @ 1A, 4A
Power Dissipation :
75W
Base Part Number :
FJP3305
Gain Bandwidth Product :
4MHz
Number of Elements :
1
Emitter Base Voltage (VEBO) :
9V
Length :
10.67mm
Mounting Type :
Through Hole
Frequency :
4MHz
Weight :
1.8g
Datasheets
FJP3305H2TU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP3305H2TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:150°C TJ, Base Part Number:FJP3305, Mounting Type:Through Hole, FJP3305H2TU pinout, FJP3305H2TU datasheet PDF, FJP3305H2TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP3305H2TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP3305H2TU


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP3305H2TU Overview


DC current gain in this device equals 26 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 1A, 4A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 4A volts.

FJP3305H2TU Features


the DC current gain for this device is 26 @ 1A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
a transition frequency of 4MHz


FJP3305H2TU Applications


There are a lot of ON Semiconductor
FJP3305H2TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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