FJP3307DH2TU
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- Mfr.Part #
- FJP3307DH2TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 8A TO220-3
- Stock
- 30,317
- In Stock ：
- 30,317
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 26 @ 2A 5V
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tube
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2A, 8A
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- NPN
- Power - Max :
- 80W
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Current - Collector (Ic) (Max) :
- 8A
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- FJP3307DH2TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP3307DH2TU Overview
This device has a DC current gain of 26 @ 2A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 400V maximal voltage is present.
FJP3307DH2TU Features
the DC current gain for this device is 26 @ 2A 5V
the vce saturation(Max) is 3V @ 2A, 8A
FJP3307DH2TU Applications
There are a lot of Rochester Electronics, LLC
FJP3307DH2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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