FJP3305

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Mfr.Part #
FJP3305
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 4A TO220-3
Stock
8,286
In Stock :
8,286

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Collector Emitter Saturation Voltage :
1V
ECCN Code :
EAR99
Frequency :
4MHz
Number of Terminations :
3
Gain Bandwidth Product :
4MHz
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
700V
Radiation Hardening :
No
Length :
10.67mm
Number of Pins :
3
JEDEC-95 Code :
TO-220AB
Element Configuration :
Single
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
1V @ 1A, 4A
Collector Emitter Breakdown Voltage :
400V
Package / Case :
TO-220-3
Weight :
1.8g
Max Collector Current :
4A
hFE Min :
8
Collector Emitter Voltage (VCEO) :
400V
Number of Elements :
1
Transition Frequency :
4MHz
Lead Free :
Lead Free
Power Dissipation :
75W
Max Power Dissipation :
75W
Packaging :
Tube
Height :
16.51mm
Published :
2008
Transistor Type :
NPN
Current Rating :
4A
Mounting Type :
Through Hole
Width :
4.83mm
Factory Lead Time :
7 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
Pbfree Code :
yes
Transistor Element Material :
SILICON
Voltage - Rated DC :
700V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
1μA ICBO
Polarity/Channel Type :
NPN
Base Part Number :
FJP3305
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
9V
Datasheets
FJP3305
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP3305 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Base Part Number:FJP3305, FJP3305 pinout, FJP3305 datasheet PDF, FJP3305 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP3305 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP3305


NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP3305H1TU Overview


This device has a DC current gain of 8 @ 2A 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 9V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 4MHz.The maximum collector current is 4A volts.

FJP3305H1TU Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
the current rating of this device is 4A
a transition frequency of 4MHz


FJP3305H1TU Applications


There are a lot of ON Semiconductor
FJP3305H1TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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