FJE3303H2TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Mount :

Through Hole

Number of Terminations :

3

ECCN Code :

EAR99

JESD-609 Code :

e3

Max Power Dissipation :

20W

Collector Emitter Voltage (VCEO) :

400V

Length :

8mm

Collector Base Voltage (VCBO) :

700V

Mounting Type :

Through Hole

Voltage - Rated DC :

400V

Drain to Source Breakdown Voltage :

700V

Lead Free :

Lead Free

Packaging :

Tube

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

14 @ 500mA 2V

Continuous Drain Current (ID) :

1.5A

Weight :

761mg

Gain Bandwidth Product :

4MHz

Transistor Element Material :

SILICON

Base Part Number :

FJE3303

Polarity/Channel Type :

NPN

Number of Pins :

3

Width :

3.25mm

Frequency :

4MHz

Collector Emitter Saturation Voltage :

3V

Collector Emitter Breakdown Voltage :

400V

Number of Elements :

1

Current Rating :

1.5A

Height :

11mm

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

8

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Collector Cutoff (Max) :

10μA ICBO

Power Dissipation :

20W

Pbfree Code :

yes

Factory Lead Time :

15 Weeks

Emitter Base Voltage (VEBO) :

9V

Operating Temperature :

150°C TJ

Element Configuration :

Single

Transistor Application :

SWITCHING

Max Collector Current :

1.5A

RoHS Status :

ROHS3 Compliant

Transition Frequency :

4MHz

Package / Case :

TO-225AA, TO-126-3

Published :

2011

Vce Saturation (Max) @ Ib, Ic :

3V @ 500mA, 1.5A