FJE3303H2TU
- Mfr.Part #
- FJE3303H2TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 400V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 3V
- Transistor Application :
- SWITCHING
- hFE Min :
- 8
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Package / Case :
- TO-225AA, TO-126-3
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Width :
- 3.25mm
- Continuous Drain Current (ID) :
- 1.5A
- Mounting Type :
- Through Hole
- Height :
- 11mm
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Max Collector Current :
- 1.5A
- Weight :
- 761mg
- Gain Bandwidth Product :
- 4MHz
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 400V
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transition Frequency :
- 4MHz
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 400V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 700V
- Published :
- 2011
- Polarity/Channel Type :
- NPN
- Base Part Number :
- FJE3303
- Packaging :
- Tube
- Transistor Type :
- NPN
- Frequency :
- 4MHz
- Current Rating :
- 1.5A
- Max Power Dissipation :
- 20W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation :
- 20W
- Collector Base Voltage (VCBO) :
- 700V
- Emitter Base Voltage (VEBO) :
- 9V
- ECCN Code :
- EAR99
- Length :
- 8mm
- Datasheets
- FJE3303H2TU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
FJE3303H2TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 14 @ 500mA 2V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 3V @ 500mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 4MHz.A maximum collector current of 1.5A volts can be achieved.
FJE3303H2TU Features
the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
FJE3303H2TU Applications
There are a lot of ON Semiconductor
FJE3303H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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