FJE3303H2
- Mfr.Part #
- FJE3303H2
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126-3
- Stock
- 27,445
- In Stock :
- 27,445
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Max Collector Current :
- 1.5A
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 20W
- Collector Base Voltage (VCBO) :
- 700V
- Package / Case :
- TO-225AA, TO-126-3
- Frequency :
- 4MHz
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 700V
- Gain Bandwidth Product :
- 4MHz
- Current Rating :
- 1.5A
- Voltage - Rated DC :
- 400V
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Emitter Base Voltage (VEBO) :
- 9V
- Factory Lead Time :
- 15 Weeks
- Width :
- 3.25mm
- Weight :
- 761mg
- Collector Emitter Voltage (VCEO) :
- 400V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 1.5A
- Pbfree Code :
- yes
- Power Dissipation :
- 20W
- Collector Emitter Breakdown Voltage :
- 400V
- Packaging :
- Tube
- Height :
- 11mm
- Element Configuration :
- Single
- Length :
- 8mm
- Transition Frequency :
- 4MHz
- Published :
- 2011
- hFE Min :
- 8
- Collector Emitter Saturation Voltage :
- 3V
- Base Part Number :
- FJE3303
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Datasheets
- FJE3303H2
FJE3303H2 Documents

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
FJE3303H2TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 14 @ 500mA 2V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 3V @ 500mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 4MHz.A maximum collector current of 1.5A volts can be achieved.
FJE3303H2TU Features
the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
FJE3303H2TU Applications
There are a lot of ON Semiconductor
FJE3303H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJE3303H1TU | onsemi | 872 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303TU | onsemi | 30,494 | TRANS NPN 400V 1.5A TO126-3 |
















