FJE3303H2
- Mfr.Part #
- FJE3303H2
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126-3
- Stock
- 27,445
- In Stock :
- 27,445
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 1.5A
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Max Collector Current :
- 1.5A
- Collector Emitter Saturation Voltage :
- 3V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Continuous Drain Current (ID) :
- 1.5A
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 4MHz
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 20W
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Published :
- 2011
- Polarity/Channel Type :
- NPN
- Height :
- 11mm
- Voltage - Rated DC :
- 400V
- Frequency :
- 4MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power Dissipation :
- 20W
- Number of Elements :
- 1
- Width :
- 3.25mm
- Emitter Base Voltage (VEBO) :
- 9V
- Transition Frequency :
- 4MHz
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Weight :
- 761mg
- Collector Emitter Voltage (VCEO) :
- 400V
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 700V
- hFE Min :
- 8
- Base Part Number :
- FJE3303
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Transistor Type :
- NPN
- Length :
- 8mm
- Collector Base Voltage (VCBO) :
- 700V
- Datasheets
- FJE3303H2

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
FJE3303H2TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 14 @ 500mA 2V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 3V @ 500mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 4MHz.A maximum collector current of 1.5A volts can be achieved.
FJE3303H2TU Features
the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
FJE3303H2TU Applications
There are a lot of ON Semiconductor
FJE3303H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJE3303H1TU | onsemi | 872 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303TU | onsemi | 30,494 | TRANS NPN 400V 1.5A TO126-3 |
















