FJE3303H2TU
- Mfr.Part #
- FJE3303H2TU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 4MHz
- Drain to Source Breakdown Voltage :
- 700V
- Max Collector Current :
- 1.5A
- Power Dissipation :
- 20W
- Length :
- 8mm
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 4MHz
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 400V
- Base Part Number :
- FJE3303
- Packaging :
- Tube
- Weight :
- 761mg
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Height :
- 11mm
- Max Power Dissipation :
- 20W
- Collector Base Voltage (VCBO) :
- 700V
- hFE Min :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1.5A
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 1.5A
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 400V
- Width :
- 3.25mm
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Transition Frequency :
- 4MHz
- Collector Emitter Saturation Voltage :
- 3V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Published :
- 2011
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 9V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 400V
- Datasheets
- FJE3303H2TU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
FJE3303H2TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 14 @ 500mA 2V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 3V @ 500mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 4MHz.A maximum collector current of 1.5A volts can be achieved.
FJE3303H2TU Features
the DC current gain for this device is 14 @ 500mA 2V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
FJE3303H2TU Applications
There are a lot of ON Semiconductor
FJE3303H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJE3303H1TU | onsemi | 872 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2 | onsemi | 27,445 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
| FJE3303TU | onsemi | 30,494 | TRANS NPN 400V 1.5A TO126-3 |
















