FJE3303H1TU
- Mfr.Part #
- FJE3303H1TU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1.5A TO126-3
- Stock
- 872
- In Stock :
- 872
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Application :
- SWITCHING
- Base Part Number :
- FJE3303
- Frequency :
- 4MHz
- Max Collector Current :
- 1.5A
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 400V
- Published :
- 2005
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Packaging :
- Tube
- Max Power Dissipation :
- 20W
- Transistor Element Material :
- SILICON
- Length :
- 8mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Collector Emitter Saturation Voltage :
- 3V
- hFE Min :
- 8
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 500mA 2V
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 9V
- Width :
- 3.25mm
- Transition Frequency :
- 4MHz
- RoHS Status :
- ROHS3 Compliant
- Height :
- 11mm
- Current Rating :
- 1.5A
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 700V
- JESD-609 Code :
- e3
- Power Dissipation :
- 20W
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 4MHz
- Continuous Drain Current (ID) :
- 1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 500mA, 1.5A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Weight :
- 761mg
- Datasheets
- FJE3303H1TU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
FJE3303H1TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 500mA 2V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 3V @ 500mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 4MHz.A maximum collector current of 1.5A volts can be achieved.
FJE3303H1TU Features
the DC current gain for this device is 8 @ 500mA 2V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz
FJE3303H1TU Applications
There are a lot of ON Semiconductor
FJE3303H1TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| FJE3303H2 | onsemi | 27,445 | TRANS NPN 400V 1.5A TO126-3 |
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| FJE3303H2TU | onsemi | 1 | TRANS NPN 400V 1.5A TO126-3 |
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