FJAFS1720TU
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- Mfr.Part #
- FJAFS1720TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 800V 12A TO3PF
- Stock
- 6,973
- In Stock ：
- 6,973
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 52 Weeks
- Element Configuration :
- Single
- Package / Case :
- TO-3P-3 Full Pack
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8.5 @ 11A 5V
- Number of Elements :
- 1
- Frequency :
- 15MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 15.7mm
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 800V
- Gate to Source Voltage (Vgs) :
- 20V
- Collector Emitter Saturation Voltage :
- 250mV
- Series :
- ESBC™
- hFE Min :
- 8
- Max Power Dissipation :
- 60W
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 3.33A, 10A
- ECCN Code :
- EAR99
- Weight :
- 6.961991g
- Collector Emitter Breakdown Voltage :
- 800V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 1.7kV
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Max Collector Current :
- 12A
- Power Dissipation :
- 60W
- Width :
- 5.7mm
- Operating Temperature :
- -55°C~125°C TJ
- Height :
- 26.7mm
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 15MHz
- Datasheets
- FJAFS1720TU
FJAFS1720TU Documents
NPN -55°C~125°C TJ 100μA 1 Elements NPN TO-3P-3 Full Pack Tube Through Hole
FJAFS1720TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 8.5 @ 11A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 3.33A, 10A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.During maximum operation, collector current can be as low as 12A volts.
FJAFS1720TU Features
the DC current gain for this device is 8.5 @ 11A 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 3.33A, 10A
the emitter base voltage is kept at 6V
FJAFS1720TU Applications
There are a lot of ON Semiconductor
FJAFS1720TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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